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| NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features * * * * * Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low CISS to Minimize Driver Loss Low Gate Charge Pb-Free Packages are Available http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 5.6 mW ID MAX 72 A MAXIMUM RATINGS (TJ = 25C Unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25C Drain Current - Continuous @ TC = 25C, Chip - Continuous @ TC = 25C, Limited by Package - Continuous @ TA = 25C, Limited by Wires - Single Pulse (tp = 10 ms) Thermal Resistance - Junction-to-Ambient (Note1) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C Thermal Resistance - Junction-to-Ambient (Note2) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 s Symbol VDSS VGS RqJC PD ID ID ID IDM RqJA PD ID RqJA PD ID TJ, Tstg EAS Value 25 20 2.4 62.5 72.0 62.8 32 140 80 1.87 12.0 110 1.36 10.0 -55 to 175 71.7 Unit Vdc Vdc C/W W A A A A C/W W A C/W W A C mJ 4 12 3 DPAK CASE 369AA STYLE 2 G N-Channel D S MARKING DIAGRAMS 4 Drain YWW T70 N03G 2 1 3 Drain Gate Source 4 Drain YWW T70 N03G 1 3 DPAK CASE 369D STYLE 2 2 123 Gate Drain Source = Device Code = Year = Work Week = Pb-Free Package 70N03 Y WW G 4 Publication Order Number: NTD70N03R/D TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq. in. pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 10 NTD70N03R ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 20 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 5 Vdc, ID = 36 Adc, VDS = 10 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr (IS = 36 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge ta tb QRR 0.86 0.73 27.9 14.8 13.1 19 1.2 nC ns Vdc (VGS = 10 Vdc, VDD = 10 Vdc, ID = 36 Adc, RG = 3 W) td(on) tr td(off) tf QT QGS QDS 6.9 1.3 18.4 5.5 13.2 3.3 6.5 nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) CISS COSS CRSS 1333 600 218 pF VGS(th) 1.0 RDS(on) gFS 27 8.1 5.6 13 8.0 Mhos 1.5 4.0 2.0 Vdc mV/C mW V(br)DSS 25 IDSS IGSS 1.5 10 100 28 20.5 Vdc mV/C mAdc Symbol Min Typ Max Unit nAdc Reverse Recovery Time 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD70N03R TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 175 ID, DRAIN CURRENT (AMPS) 150 125 100 75 50 25 0 0 2 4 6 8 4.2 V 4V 3.8 V 3.6 V 3.4 V 3.2 V 3V 2.8 V 2.6 V 10 V 8V 6V 5V 4.5 V TJ = 25C ID, DRAIN CURRENT (AMPS) 150 VDS 10 V 125 100 75 50 25 0 0 2 TJ = 25C TJ = 175C TJ = -55C 4 6 8 2.4 V 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.05 ID = 72 A TJ = 25C 0.04 0.016 VGS = 10 V 0.012 TJ = 175C 0.03 0.008 TJ = 25C 0.02 0.004 0.01 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = -55C 0 10 30 50 70 90 110 130 150 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 ID = 36 A VGS = 10 V 1,000,000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V 100,000 IDSS, LEAKAGE (nA) TJ = 175C 10,000 1000 TJ = 100C 100 10 0 25 50 75 100 125 150 175 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTD70N03R VDS = 0 V CISS CRSS 2000 1500 1000 500 0 10 5 VGS 0 VDS 5 10 15 20 CISS VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3000 2500 C, CAPACITANCE (pF) 10 QT 8 VDD = 10 V QGS TJ = 25C 6 QGD 4 COSS CRSS 2 0 0 ID = 36 A TJ = 25C 10 20 QG, TOTAL GATE CHARGE (nC) 30 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 1000 IS, SOURCE CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.6 VGS = 0 V TJ = 25C t, TIME (ns) 100 td(off) 10 td(on) tf tr 1 VDS = 10 V ID = 36 A VGS = 10 V 100 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 I D, DRAIN CURRENT (AMPS) 10 ms 120 10 VGS = 20 V SINGLE PULSE TC = 25C 1 ms 10 ms Ider (%) 40 0 0 100 ms 80 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 dc 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 50 100 Tmb (C) 150 200 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Normalized Continuous Drain Current as a function of Mounting Base Temperature http://onsemi.com 4 NTD70N03R r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.01 1.0E-05 1.0E-04 1.0E-01 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Order Number NTD70N03R NTD70N03RG NTD70N03RT4 NTD70N03RT4G NTD70N03R-1 NTD70N03R-1G Package DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK-3 Straight Lead DPAK-3 Straight Lead (Pb-Free) Shipping 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe cifications Brochure, BRD8011/D. http://onsemi.com 5 NTD70N03R PACKAGE DIMENSIONS DPAK CASE 369AA-01 ISSUE A -TB V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --0.89 1.27 3.93 --- A S 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTD70N03R PACKAGE DIMENSIONS DPAK CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -TSEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTD70N03R/D |
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